Growth of epitaxial silicon layers by vacuum evaporation

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Philosophical Magazine 11 (109):11-30 (1965)
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10.1080/14786436508211921

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original Unvala, B. A.; Booker, G. R. (1964) "Growth of epitaxial silicon layers by vacuum evaporation". Philosophical Magazine 9(100):691-701

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Growth of epitaxial silicon layers by vacuum evaporation.B. A. Unvala & G. R. Booker - 1964 - Philosophical Magazine 9 (100):691-701.
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Citations of this work

Electron microscopy at high voltages.Gareth Thomas - 1968 - Philosophical Magazine 17 (150):1097-1108.
Tripyramids and associated defects in epitaxial silicon layers.G. R. Booker - 1965 - Philosophical Magazine 11 (113):1007-1020.

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